e/Ballistic transistor

Information
has gloss	eng: Ballistic deflection transistors are electronic devices being developed for high-speed integrated circuits. Instead of switching the flow of several electrons using gates, as it is done in FETs, they try to manipulate the course of single electrons using electromagnetic forces. These free flowing electrons are forced around a wedge-shaped obstacle to in one direction or another, corresponding to a logical 1 or 0. The advantages are a smaller size, reduced noise, less needed power and higher speeds (up to the terahertz region). At the moment it is a concept, although a research prototype has been created. This is a technique currently being investigated by the University of Rochester.
lexicalization	eng: Ballistic transistor
instance of	c/Transistor types