e/Induced high electron mobility transistor

Information
has gloss	eng: In contrast to a modulation-doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate, since the charge carriers are "induced" to the 2DEG plane rather than created by dopants. The absence of a doped layer enhances the electron mobility significantly when compared to their modulation-doped counterparts.
lexicalization	eng: Induced high electron mobility transistor
instance of	c/Transistor types