| Information | |
|---|---|
| has gloss | eng: *Nucleation and growth of dislocations is a known mechanism for degradation of the active region, where the radiative recombination occurs. This requires a presence of an existing defect in the crystal and is accelerated by heat, high current density, and emitted light. Gallium arsenide and aluminium gallium arsenide are more susceptible to this mechanism than gallium arsenide phosphide and indium phosphide. Due to different properties of the active regions, gallium nitride and indium gallium nitride are virtually insensitive to this kind of defect. |
| lexicalization | eng: List of LED failure modes |
| instance of | (noun) diode such that light emitted at a p-n junction is proportional to the bias current; color depends on the material used LED, light-emitting diode |
Lexvo © 2008-2025 Gerard de Melo. Contact Legal Information / Imprint